ISO 14701:2011
Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness
Reference number
ISO 14701:2011
Edición 1
2011-08
Retirada
ISO 14701:2011
54929
Retirada (Edición 1, 2011)

Resumen

ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

Informaciones generales

  •  : Retirada
     : 2011-08
    : Retirada de la Norma Internacional [95.99]
  •  : 1
     : 15
  • ISO/TC 201/SC 7
    71.040.40 
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