International Standard
ISO 14701:2018
Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness
Reference number
ISO 14701:2018
Edición 2
2018-11
International Standard
Vista previa
ISO 14701:2018
74818
No disponible en español
Publicado (Edición 2, 2018)

ISO 14701:2018

ISO 14701:2018
74818
Idioma
Formato
CHF 96
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Resumen

This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

Informaciones generales

  •  : Publicado
     : 2018-11
    : Cierre de la revisión [90.60]
  •  : 2
     : 17
  • ISO/TC 201/SC 7
    71.040.40 
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